• Oct 30, 2025 high power algan gan hfets for industrial scienti Material Properties and Heterostructure Design GaN's wide bandgap (~3.4 eV) and high electron mobility (~2000-2500 cm²/V·s) underpin its suitability for high-power applications. When combined with AlGaN, whose aluminum content can be tuned, the heterostructure forms a BY Johnnie Schmeler
